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Power Management Switch IC Series for PCs and Digital Consumer Product
MOSFET Controller IC for Load Switching
BD2270HFV
No.09029EAT01
Description The BD2270HFV is an IC with a single built-in external N-channel MOSFET driver circuit. This IC has a built-in charge pump circuit for gate drive and output discharge circuit, enabling configuration of a high side load switch for N-channel MOSFET drive without using any external parts. In addition, the control input terminal has a built-in comparator with hysteresis function, facilitating control of the power up sequence. The space saving type of HVSOF5 package is used. Features 1) Built-in charge pump 2) Built-in discharge circuit for output charge 3) Soft start circuit 4) Built-in comparator with hysteresis function at control input terminal 5) Compact HVSOF5 package 6) Operating current 50A 7) Standby current 5A 8) Possible to drive N-channel power MOSFET Applications PCs, PC peripheral devices, digital consumer electronics, etc.
Absolute Maximum Ratings Parameter Supply voltage AEN voltage DISC voltage GATE voltage Storage temperature range Power dissipation Symbol VCC VAEN VDISC VGATE TSTG Pd Limits -0.3 ~ 6.0 -0.3 ~ 6.0 -0.3 ~ 6.0 -0.3 ~ 15.0 -55 ~ 150 669
*1
Unit V V V V C mW
*1 When mounted on a 70 mm70 mm1.6 mm glass epoxy PCB, derated at 5.352 mW/C above Ta25C *2 This IC is not designed to be radiation-proof. Operating Conditions Parameter Operating voltage range Operating temperature range Symbol VCC TOPR Limits 2.7 ~ 5.5 -25 ~ 85 Unit V C
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1/12
2009.04 - Rev.A
BD2270HFV
Electrical Characteristics (Vcc =3.0V, Ta=25C unless otherwise specified) Limits Parameter Operating current Standby current Symbol Min. ICC ISTB Typ. 50 5 Max. 75 10 A A VAEN = 2.5V VAEN = 0V Unit
Technical Note
Condition
VAENH AEN input voltage VAENL AEN input current IAEN
1.55 1.35 -
2 1.9 3
2.45 2.35 5
V V A
High level input Low level input VAEN = 3V
10 GATE output voltage VGATE 6.6 6
13.5 9.5 8.5
15 9.9 9
V V V
VCC=5V VCC=3.3V VCC=3V
GATE rise time GATE fall time
TON TOFF
-
130 18
750 60
s s
CGATE=500pF VCC=3 VGATE > 4V CGATE = 500pF VCC=3V VGATE < 0.5V
DISC discharge resistance
RDISC
-
200
300
VAEN=0V
Measurement Circuit
C GATE DISC GND
VCC AEN ON/OFF
GATE
BD2270HFV
Fig.1 Measurement Circuit Timing Diagram
VAEN
VAENH TON2 TON1 VCC+2V
VAENL TOFF
VGATE
VCC+1V
0.5V
Fig.2 Timing Diagram
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2/12
2009.04 - Rev.A
BD2270HFV
Reference Data
140 Ta=25C OPERATING CURRENT : IDD[A] 120 100 80 60 40 20 0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6
120 OPERATING CURRENT : IDD [A] 100 80 60 40 20 0 -50 140 VCC=3.0V
Technical Note
14 OPERATING CURRENT : ISTB[A]
0 50 100 AMBIENT TEMPERATURE : Ta[]
Ta=25C
12 10 8 6 4 2 0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6
Fig.3 Operating Current AEN Enable
14 VCC=3.0V 12
ENABLE INPUT VOLTAGE : VAEN[V] 0 2.5 3.0
Fig.4 Operating Current AEN Enable
3.0
Fig.5 Standby Current AEN Disable
Ta=25C Low to High
2.0 1.5 1.0 0.5 0.0
ENABLE INPUT VOLTAGE : VAEN[V] 2.5
VCC=3.0V
OPERATING CURRENT : ISTB [A]
10 8 6 4 2 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[]
Low to High High to Low
High to Low
2.0 1.5 1.0 0.5 0.0
2
3 4 5 SUPPLY VOLTAGE : VCC[V]
6
-50
0 50 100 AMBIENT TEMPERATURE : Ta[]
Fig.6 Standby Current AEN Disable
10.0
AEN INPUT CURRENT : IAEN[A]
10.0
Fig.7 AEN Input Voltage
14
GATE OUTPUT VOLTAGE : VGATE [V]
Fig.8 AEN Input Voltage
Ta=25C
AEN INPUT CURRENT : IAEN[A]
VCC=3.0V
8.0
Ta=25C 12 10 8 6 4 2 0
8.0
6.0
6.0
4.0
4.0
2.0
2.0
0.0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6
0.0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[]
2
3 4 5 SUPPLY VOLTAGE : VCC[V]
6
Fig.9 AEN Input Current
14 GATE OUTPUT VOLTAGE : VGATE[V] VCC=3.0V 12 10 8 6 4 2 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[]
Fig.10 AEN Input Current
300
Ta=25C 300
Fig.11 GATE Output Voltage
VCC=3.0V
DISC ON RESISTANCE : RDISC[]
DISC ON RESISTANCE : RDISC[]
250 200 150 100 50 0 2 3 4 5 SUPPLY VOLTEGE : VCC[V] 6
250 200 150 100 50 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[]
Fig.12 GATE Output Voltage
Fig.13 DISC ON Resistance
Fig.14 DISC ON Resistance
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3/12
2009.04 - Rev.A
BD2270HFV
Technical Note
200
Ta=25C, CGATE=500pF
200
350
VCC=3.0V, CGATE=500pF Ta=25C, CGATE=500pF
TURN ON TIME1 : TON1[s]
TURN ON TIME1 : TON1[s]
160
160
TURN ON TIME2 : TON2[s]
300 250 200 150 100 50 0
120
120
80
80
40
40
0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6
0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[]
2
3 4 5 SUPPLY VOLTAGE : VCC[V]
6
Fig.15 GATE Rise Time 1
Fig.16 GATE Rise Time 1
Fig.17 GATE Rise Time 2
350
VCC=3.0V, CGATE=500pF
TURN OFF TIME : TOFF[s]
20
20
Ta=25C, CGATE=500pF VCC=3.0V, CGATE=500pF
TURN OFF TIME : TOFF[s]
300 TURN ON TIME2 : TON2[s] 250 200 150 100 50 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[]
16
16
12
12
8
8
4
4
0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] 6
0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[]
Fig.18 GATE Rise Time 2
Fig.19 GATE Fall Time
Fig.20 GATE Fall Time
100.0
100.0
VCC=5.0V VCC=3.0V
GATE DRIVE CURRENT : IG[A]
10.0
GATE DRIVE CURRENT : IG[A]
0 2 4 6 8
10.0
1.0
1.0
0.1
0.1 0
GATE VOLTAGE ABOVE SUPPLY : VGATE[V]
2 4 6 GATE VOLTAGE ABOVE SUPPLY : VGATE[V]
8
Fig.21 GATE Drive Current
Fig.22 GATE Drive Current
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4/12
2009.04 - Rev.A
BD2270HFV
Waveform Data
VAEN (5V/div) VCC=3.0V CGATE=500pF VAEN (5V/div) VCC=3.0V CGATE=500pF VAEN (5V/div)
Technical Note
VCC=3.0V CGATE=500pF
VGATE (2V/div)
VGATE (2V/div)
VGATE (2V/div)
TIME (1ms/div)
TIME (100s/div)
TIME (5s/div)
Fig.23 GATE Rise / Fall Characteristics
Fig.24 GATE Rise Characteristics
Fig.25 GATE Fall Characteristics
VAEN (5V/div) VCC=3.0V RTF025N03 VGATE
VAEN (5V/div) VCC=3.0V RTF025N03 VGATE
VAEN (5V/div)
VCC=3.0V RTF025N03 CL = 100F VGATE
VOUT_SWITCH (2V/div) (2V/div)
VOUT_SWITCH (2V/div)
VOUT_SWITCH
TIME (100s/div)
TIME (5s/div)
TIME (20ms/div)
Fig.26 GATE Switch Rise Characteristics
Fig.27 GATE Switch Fall Characteristics
Fig.28 GATE Switch Fall Characteristics
VAEN (5V/div) VCC=3.0V RSS130N03
VAEN (5V/div) VCC=3.0V RSS130N03
VGATE VOUT_SWITCH (2V/div) (2V/div)
VGATE VOUT_SWITCH
TIME (100s/div)
TIME (10s/div)
Fig.29 GATE Switch Rise Characteristics
MOSFET : RTF025N03 RSS130N03 3.3V V IN_SWIT CH V OUT_SWIT CH CL
Fig.30 GATE Switch Fall Characteristics
1uF GATE
VCC ON/OFF AEN
DISC GND
BD2270HFV
Fig.31 Switch Rise / Fall Characteristics Measurement Circuit Diagram
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5/12
2009.04 - Rev.A
BD2270HFV
Block Diagram
GATE
Technical Note
VCC
OSC
Charge Pump (x3)
GND DISC
AEN
Control
VCC GND AEN
1 2 3
5
GATE
4
DISC
Fig.32 Block Diagram
Fig.33 Pin Configuration
Pin description PIN No. 1 2 3 4 5 PIN name VCC GND AEN DISC GATE I/O I O O Function Power input terminal Ground terminal Control input terminal Turn ON the external MOSFET switch with high level input. High level input 2.0V, Low level input 0.8V Switch output discharge terminal GATE drive output terminal Used to connect the gate of the external N-channel MOSFET.
I/O circuit Pin name Pin No. Equivalent circuit
AEN
3
DISC
4
GATE
5
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6/12
2009.04 - Rev.A
BD2270HFV
Functional Description
Technical Note
The BD2270HVF is a driver IC to use an N-channel MOSFET as a high side load switch. This IC incorporates the following functions. 1. GATE drive A voltage to drive the gate of N-channel MOSFET is generated by a built-in charge pump in the BD2270HFV. The built-in charge pump in the BD2270HFV generates a voltage three times as high as the power supply voltage at the GATE terminal. In addition, since this IC has a built-in capacitor for the charge pump, it needs no external parts. The charge pump operates when the AEN is set to High. When the AEN is set to Low, the GATE terminal voltage is fixed to the GND level. 2. Output discharge circuit The output discharge circuit is enabled when the AEN is set to Low. When the discharge circuit is activated, the 200(Typ.) MOSFET switch located between the DISC terminal and the GND terminal turns ON. Connecting between the DISC terminal and the source side (load side) of the N-channel MOSFET makes it possible to immediately discharge capacitive load. Soft start function When the AEN terminal input voltage reaches the High level, the built-in charge pump in the BD2270HFV charges the gate of the N-channel MOSFET. The turn-on time of the N-channel MOSFET is determined by the GATE capacity. In addition, connecting a capacitor to the GATE terminal makes it possible to slow the rise of turn-on time of the N-channel MOSFET, thus achieving reduction of the inrush current to a large capacitive load.
3.
4. Analog control input terminal The AEN input of the BD2270HFV is connected to the built-in hysteresis comparator. Consequently, even analog signals can control the BD2270HFV, thus facilitating the control of the switch ON-OFF sequence.
VCC
VIN_SWITCH
VAEN
VGATE
VOUT_SWITCH
Discharge circuit
ON
OFF
ON
Fig. 34 Operation Timing
* To turn ON the power supply (VCC, VIN_SWITCH), set the AEN to Low.
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7/12
2009.04 - Rev.A
BD2270HFV
Application Circuit 1. Configuration of 3.3V load switch
Technical Note
3.3V
V IN_SWITCH
V OUT_SWITCH
3.3V Load
VCC ON/OFF AEN
GATE DISC GND BD2270HFV
Fig.35 Configuration of 3.3V Load Switch 2. Configuration of 5V load switch
5V
5V Load
VCC ON/OFF AEN
GATE DISC GND BD2270HFV
Fig.36 Configuration of 5V Load Switch A 5V load switch can be configured like the 3.3V load switch. However, if the external N-channel MOSFET is low VGSS, clamp it with Zener diode and the like. 3. Configuration of low-voltage load switch
1.2V 3.3V
1.2V Load
VCC AEN ON/OFF
GATE DISC GND BD2270HFV
Fig.37 Configuration of Low-voltage Load Switch Providing BD2270HFV drive power supply enables configuration of a low-voltage load switch.
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8/12
2009.04 - Rev.A
BD2270HFV
4. Soft start configuration
Technical Note
3.3V
3.3V Load
VCC ON/OFF AEN
GATE DISC GND BD2270HFV
Fig.38 Soft Start Configuration Connecting an external capacitor to the GATE terminal of the BD2270HFV makes it possible to slow the rise of the N-channel MOSFET, thus achieving reduction of the inrush current to the large-capacity capacitor mounted on the load side. Application Information This system connection diagram gives no warranty to the operation as application. To change the external circuit constant or else and use this IC, determine the application allowing for an adequate margin with consideration given to variations in external parts and ICs including not only static characteristics but also transient characteristics.
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9/12
2009.04 - Rev.A
BD2270HFV
Thermal Derating Characteristics (HVSOF5)
Technical Note
800 700 POWER DISSIPATION : Pd (mW)
600 500
400 300 200
100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta ()
Fig. 39 Power dissipation curve (Pd-Ta Curve) Mounted on a 70 mm70 mm1.6 mm glass epoxy PCB Cautions on use (1) Absolute Maximum Ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical safety measures including the use of fuses, etc. (2) Operating conditions These conditions represent a range within which characteristics can be provided approximately as expected. The electrical characteristics are guaranteed under the conditions of each parameter. Reverse connection of power supply connector The reverse connection of power supply connector can break down ICs. Take protective measures against the breakdown due to the reverse connection, such as mounting an external diode between the power supply and the IC's power supply terminal. Power supply line Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this regard, for the digital block power supply and the analog block power supply, even though these power supplies has the same level of potential, separate the power supply pattern for the digital block from that for the analog block, thus suppressing the diffraction of digital noises to the analog block power supply resulting from impedance common to the wiring patterns. For the GND line, give consideration to design the patterns in a similar manner. Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal. At the same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus determining the constant.
(3)
(4)
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10/12
2009.04 - Rev.A
BD2270HFV
(5)
Technical Note
GND voltage Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state. Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric transient. (6) Short circuit between terminals and erroneous mounting In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or between the terminal and the power supply or the GND terminal, the ICs can break down. (7) Operation in strong electromagnetic field Be noted that using ICs in the strong electromagnetic field can malfunction them. Inspection with set PCB On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress. Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to the jig. After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In addition, for protection against static electricity, establish a ground for the assembly process and pay thorough attention to the transportation and the storage of the set PCB. Input terminals In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not apply a voltage to the input terminals when no power supply voltage is applied to the IC. In addition, even if the power supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the guaranteed value of electrical characteristics.
(8)
(9)
(10) Ground wiring pattern If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well. (11) External capacitor In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc. (12) Thermal design Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in actual states of use.
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11/12
2009.04 - Rev.A
BD2270HFV
Order type name selection -
Technical Note
BD
ROHM type name
2270
Part number 2270
HFV
TR
taping type name TR: embossed reel tape
Package type name HFV: HVSOF
HVSOF5

Tape
1.60.05 0.8 0.3
Embossed carrier tape 3000pcs TR
(The direction is the 1pin of product is at the upper light when you hold reel on the left hand and you pull out the tape on the right hand)
0.2Max.
Quantity Direction of feed
1.00.05
(0.05)
1.60.05
(0.91)
54
4
5
(MAX 1.28 include BURR)
1.20.05
(0.41)
123
321
0.130.05
0.6Max.
XXX XXX
0.220.05 0.5
XXX XXX
XXX XXX
XXX XXX
XXX XXX
1Pin Reel
Direction of feed
(Unit:mm)
When you order , please order in times the amount of package quantity.
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12/12
2009.04 - Rev.A
Notice
Notes
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